2008-04-11 rev. 2.5 page 1 SPD08N50C3 cool mos? power transistor v ds @ t jmax 560 v r ds(on) 0.6 ? i d 7.6 a feature ? new revolutionary high voltage technology ? worldwide best r ds(on) in to-252 ? ultra low gate charge ? periodic avalanche rated ? extreme d v /d t rated ? ultra low effective capacitances ? improved transconductance p g -to252 type package ordering code SPD08N50C3 p g -to252 q67040-s4569 marking 08n50c3 maximum ratings, at t c = 25c, unless otherwise specified parameter symbol value unit continuous drain current t c = 25 c t c = 100 c i d 7.6 4.6 a pulsed drain current, t p limited by t j max i d p uls 22.8 avalanche energy, single pulse i d =5.5a, v dd =50v e as 230 mj avalanche energy, repetitive t ar limited by t jmax 1) i d =7.6a, v dd =50v e ar 0.5 avalanche current, repetitive t a r limited by t j max i a r 7.6 a gate source voltage v gs 20 v gate source voltage ac (f >1hz) v gs 30 power dissipation, t c = 25c p tot 83 w operating and storage temperature t j , t st g -55... +150 c reverse diode dv/dt dv/dt 15 v/ns 6)
2008-04-11 rev. 2.5 page 2 SPD08N50C3 maximum ratings parameter symbol value unit drain source voltage slope v ds = 400 v, i d = 7.6 a, t j = 125 c d v /d t 50 v/ns thermal characteristics parameter symbol values unit min. typ. max. thermal resistance, junction - case r thjc - - 1.5 k/w thermal resistance, junction - ambient, leaded r thja - - 75 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 2) r thja - - - - 75 50 soldering temperature, reflow soldering, msl3 1.6 mm (0.063 in.) from case for 10s 3) t sold - - 260 c electrical characteristics parameter symbol conditions values unit min. typ. max. drain-source breakdown voltage v (br)dss v gs =0v, i d =0.25ma 500 - - v drain-source avalanche breakdown voltage v (br)ds v gs =0v, i d =7.6a - 600 - gate threshold voltage v gs ( th ) i d =350 ? v gs = v ds 2.1 3 3.9 zero gate voltage drain current i dss v ds =500v, v gs =0v, t j =25c, t j =150c - - 0.5 - 1 100 a gate-source leakage current i gss v gs =20v, v ds =0v - - 100 na drain-source on-state resistance r ds(on) v gs =10v, i d =4.6a, t j =25c t j =150c - - 0.5 1.5 0.6 - ? r g f =1mhz, open drain - 1.2 -
2008-04-11 rev. 2.5 page 3 SPD08N50C3 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. transconductance g fs v ds 2* i d * r ds(on)max , i d =4.6a - 6 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 750 - pf output capacitance c oss - 350 - reverse transfer capacitance c rss - 12 - effective output capacitance, 4) energy related c o(er) v gs =0v, v ds =0v to 400v - 56 - pf effective output capacitance, 5) time related c o(tr) - 30 - turn-on delay time t d(on) v dd =400v, v gs =0/10v, i d =7.6a, r g =12 - 6 - ns rise time t r - 5 - turn-off delay time t d(off) - 60 - fall time t f - 7 - gate charge characteristics gate to source charge q gs v dd =400v, i d =7.6a - 3 - nc gate to drain charge q gd - 17 - gate charge total q g v dd =400v, i d =7.6a, v gs =0 to 10v - 32 - gate plateau voltage v (plateau) v dd =400v, i d =7.6a - 5 - v 1 repetitve avalanche causes additional power losses that can be calculated as p av = e ar * f . 2 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air. 3 soldering temperature for to-263: 220c, reflow 4 c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss . 5 c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . 6 i sd <=i d , di/dt<=400a/us, v dclink =400v, v peak 2008-04-11 rev. 2.5 page 4 SPD08N50C3 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. inverse diode continuous forward current i s t c =25c - - 7.6 a inverse diode direct current, pulsed i sm - - 22.8 inverse diode forward voltage v sd v gs =0v, i f = i s - 1 1.2 v reverse recovery time t rr v r =400v, i f = i s , d i f /d t =100a/s - 370 - ns reverse recovery charge q rr - 3.6 - c peak reverse recovery current i rrm - 25 - a peak rate of fall of reverse recovery current di rr / dt - 700 - a/s typical transient thermal characteristics symbol value unit symbol value unit typ. typ. thermal resistance r th1 0.024 k/w r th2 0.046 r th3 0.085 r th4 0.308 r th5 0.317 r th6 0.112 thermal capacitance c th1 0.00012 ws/k c th2 0.0004578 c th3 0.000645 c th4 0.001867 c th5 0.004795 c th6 0.045 external heatsink t j t case t amb c th1 c th2 r th1 r th,n c th,n p tot (t)
2008-04-11 rev. 2.5 page 5 SPD08N50C3 1 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 10 20 30 40 50 60 70 80 w 100 SPD08N50C3 p tot 2 safe operating area i d = f ( v ds ) parameter : d = 0 , t c =25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 2 10 a i d tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms dc 3 transient thermal impedance z thjc = f ( t p ) parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s t p -3 10 -2 10 -1 10 0 10 1 10 k/w z thjc d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse 4 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 10 s, v gs 0 5 10 15 v ds 25 v 0 4 8 12 16 a 24 i d 4,5v 5v 5,5v 6v 6,5v 7v 20v 10v 8v
2008-04-11 rev. 2.5 page 6 SPD08N50C3 5 typ. output characteristic i d = f ( v ds ); t j =150c parameter: t p = 10 s, v gs 0 2 4 6 8 10 12 14 16 18 20 22 v 25 v ds 0 1 2 3 4 5 6 7 8 9 10 11 a 13 i d 4v 4.5v 5v 5.5v 6v 20v 8v 6.5v 6 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: t j =150c, v gs 0 2 4 6 8 10 12 a 15 i d 0 1 2 3 4 5 6 7 8 10 r ds(on) 4v 4.5v 5v 5.5v 6v 6.5v 8v 20v 7 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 4.6 a, v gs = 10 v -60 -20 20 60 100 c 180 t j 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.4 SPD08N50C3 r ds(on) typ 98% 8 typ. transfer characteristics i d = f ( v gs ); v ds 2 x i d x r ds(on)max parameter: t p = 10 s 0 2 4 6 v 10 v gs 0 2 4 6 8 10 12 14 16 18 20 a 24 i d 25c 150c
2008-04-11 rev. 2.5 page 7 SPD08N50C3 9 typ. gate charge v gs = f ( q gate ) parameter: i d = 7.6 a pulsed 0 5 10 15 20 25 30 35 40 nc 50 q gate 0 2 4 6 8 10 12 v 16 SPD08N50C3 v gs 0.2 v ds max 0.8 v ds max 10 forward characteristics of body diode i f = f (v sd ) parameter: t j , t p = 10 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd -1 10 0 10 1 10 2 10 a SPD08N50C3 i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%) 11 avalanche soa i ar = f ( t ar ) par.: t j t j (start) =125c t j (start) =25c 12 avalanche energy e as = f ( t j ) par.: i d = 5.5 a, v dd = 50 v 20 40 60 80 100 120 c 160 t j 0 20 40 60 80 100 120 140 160 180 200 220 mj 260 e as
2008-04-11 rev. 2.5 page 8 SPD08N50C3 13 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j 450 460 470 480 490 500 510 520 530 540 550 560 570 v 600 SPD08N50C3 v (br)dss 14 avalanche power losses p ar = f ( f ) parameter: e ar =0.5mj 10 4 10 5 10 6 mhz f 0 100 200 300 w 500 p ar 15 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 100 200 300 v 500 v ds 0 10 1 10 2 10 3 10 4 10 pf c ciss coss crss 16 typ. c oss stored energy e oss = f ( v ds ) 0 100 200 300 v 500 v ds 0 0.5 1 1.5 2 2.5 3 j 4 e oss
2008-04-11 rev. 2.5 page 9 SPD08N50C3 definition of diodes switching characteristics
2008-04-11 rev. 2.5 page 10 SPD08N50C3 pg-to252-3-1, pg-to252-3-11, pg-to252-3-21 (d-pak)
2008-04-11 rev. 2.5 page 11 SPD08N50C3
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